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October 2013
FQT3P20
P -Channel QFET ? MOSFET
- 200 V, -0.67 A, 2.7 Ω
Description
This P-Channel enhancement mode power MOSFET is
produced using Fairchild Semiconductor’s proprietary
planar stripe and DMOS technology. This advanced
MOSFET technology has been especially tailored to
reduce on-state resistance, and to provide superior
switching performance and high avalanche energy
strength. These devices are suitable for switched mode
power supplies, audio amplifier, DC motor control, and
variable switching power applications.
Features
? -0.67 A, -200 V, R DS(on) = 2.7 ? (Max.) @V GS = 10 V ,
I D = 0.335 A
? Low G ate C harge ( T yp . 6.0 nC)
? Low Crss ( T yp . 7.5 pF)
D
D
S
SOT-223
G
D
G
D
S
Absolute Maximum Ratings
T C = 25°C unless otherwise noted .
Symbol
V DSS
Drain-Source Voltage
Parameter
FQT3P20 TF
-200
Unit
V
I D
Drain Current
- Continuous (T C = 25°C)
- Continuous (T C = 70°C)
-0.67
-0.53
A
A
I DM
Drain Current
- Pulsed
(Note 1)
-2.7
A
V GSS
Gate-Source Voltage
± 30
V
E AS
I AR
E AR
dv/dt
P D
Single Pulsed Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Power Dissipation (T C = 25°C)
- Derate above 25°C
(Note 2)
(Note 1)
(Note 1)
(Note 3)
150
-0.67
0.25
-5.5
2.5
0.02
mJ
A
mJ
V/ns
W
W/°C
T J , T STG
T L
Operating and Storage Temperature Range
Maximum lead temperature for soldering purposes,
1/8 " from case for 5 seconds
-55 to +150
300
°C
°C
Thermal Characteristics
Symbol
R θ JA
Parameter
Thermal Resistance, Junction-to-Ambient
FQT3P20TF
50
Unit
°C / W
?2001 Fairchild Semiconductor Corporation
FQT3P20 Rev. C0
1
www.fairchildsemi.com
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